About the company
Sandisk understands how people and businesses consume data and we relentlessly innovate to deliver solutions that enable today’s needs and tomorrow’s next big ideas. With a rich history of groundbreaking innovations in Flash and advanced memory technologies, our solutions have become the beating heart of the digital world we’re living in and that we have the power to shape.
Responsibilities
- Architect and design circuits at transistor level and gate level for leading-edge 3D NAND flash memory focusing on high-speed datapath circuit design and page buffers design.
- Perform block level and full chip circuit simulations to meet all performance specifications.
- RTL design, synthesis, static timing analysis and verification in verilog for page buffer and data path control logics.
- Conduct silicon debugging and evaluation with micro-probing.
- Collaborate with characterization engineers to fully characterize silicon, and partner with other designers to develop solutions for silicon issues.
- Generate detailed technical reports and presentations.
Requirements
- Master's degree in Electrical Engineering or equivalent with 12 or more years of relevant experience.
- Knowledge and/or experience in data path design (Nand, DRAM, LPDDR or HBM).
- Knowledge in decoding concept and redundancy concept.
- Knowledge and/or experience in Nand page buffer design.
- Knowledge and/or experience in RTL design.
- Knowledge and/or experience in non-volatile memory design (NAND flash memory cell operation in particular) is a big advantage.
- Knowledge and/or experience in High speed I/O circuit is a big plus.
- A strong device background and experience with evaluating new process technologies for use in design is preferred.